WS2 (2H Tungsten Disulfide)
2H-WS2 is a semiconductor with an indirect band gap of ~1.3 eV. Monolayer 2H-WS2 has a direct band gap. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Tungsten Disulfide belongs to the group-VI transition metal dichalcogenides (TMDC).
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The 2H phase WS2 crystals produced at HQ Graphene have a typical lateral size of ~0.8-1 cm, are hexagonal shaped and have a metallic appearance.
The 2H WS2 is n-type semiconductor, having a typical charge carrier density of ~1014cm-3 at room temperature.
A selection of peer review publications on the WS2 crystals we sell can be found below.
| Crystal size | ~10 mm |
| Electrical properties | Semiconductor, n-type |
| Crystal structure | hexagonal |
| Unit cell parameters | a = b = 0.315 nm, c = 1.227 nm, α = β = 90, γ = 120° |
| Monolayer properties |  Link to C2DB containing calculated properties |
| Type | Synthetic |
| Purity | >99.995 % |
| Characterized by | XRD, Raman, EDX, Hall measurement |
| More information? | Please contact us by email or phone |
The single crystal 2H WS2 is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Hall measurement: Extraction of charge carrier density and doping in the Van der Pauw geometry.
Raman, XRD and EDX on 2H-WS2:
Click on an image to zoom
HQ Graphene Wiki on:
2H phase WS2 (Tungsten disulfide)
1. Hu, C., et al. "Vertical WS2 spin valve with Ohmic property based on Fe3GeTe2 electrodes." Chinese Physics B 30.9 (2021): 097505.
2. Lee, G., et al. "Ambipolar charge transport in two-dimensional WS2 metal-insulator-semiconductor and metal-insulator-semiconductor field-effect transistors." ACS applied materials & interfaces 12.20 (2020): 23127-23133.
3. Wu, L., et al. "Polarized photoluminescence spectroscopy in WS2, WSe2 atomic layers and heterostructures by cylindrical vector beams." Chinese Physics B 30.8 (2021): 087802.
4. Bai, Z., et al. "Controlling Tunneling Characteristics via Bias Voltage in Bilayer Graphene/WS2/Metal Heterojunctions." Nanomaterials 12.9 (2022): 1419.