WS2 (2H Tungsten Disulfide)

2H WS2 Tungsten Disulfide 2H-WS2 is a semiconductor with an indirect band gap of ~1.3 eV. Monolayer 2H-WS2 has a direct band gap. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Tungsten Disulfide belongs to the group-VI transition metal dichalcogenides (TMDC). To buy WS2 crystals please click here.

The 2H phase WS2 crystals produced at HQ Graphene have a typical lateral size of ~0.8-1 cm, are hexagonal shaped and have a metallic appearance. The 2H WS2 is n-type semiconductor, having a typical charge carrier density of ~1014cm-3 at room temperature. A selection of peer review publications on the WS2 crystals we sell can be found below.

2H-WS2 crystal properties
Crystal size ~10 mm
Electrical properties Semiconductor, n-type
Crystal structure hexagonal
Unit cell parameters a = b = 0.315 nm, c = 1.227 nm, α = β = 90, γ = 120°
Monolayer properties Link to C2DB containing calculated properties
Type Synthetic
Purity >99.995 %
Characterized by XRD, Raman, EDX, Hall measurement
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The single crystal 2H WS2 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Hall measurement: Extraction of charge carrier density and doping in the Van der Pauw geometry.

Raman, XRD and EDX on 2H-WS2:

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X-ray diffraction on a single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10

Powder X-ray diffraction (XRD) of a single crystal 2H-WS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal 2H-WS2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal 2H-WS2. Measurement was performed with a 785 nm Raman system at room temperature.

HQ Graphene Wiki on:

2H phase WS2 (Tungsten disulfide)

1. Hu, C., et al. "Vertical WS2 spin valve with Ohmic property based on Fe3GeTe2 electrodes." Chinese Physics B 30.9 (2021): 097505.

2. Lee, G., et al. "Ambipolar charge transport in two-dimensional WS2 metal-insulator-semiconductor and metal-insulator-semiconductor field-effect transistors." ACS applied materials & interfaces 12.20 (2020): 23127-23133.

3. Wu, L., et al. "Polarized photoluminescence spectroscopy in WS2, WSe2 atomic layers and heterostructures by cylindrical vector beams." Chinese Physics B 30.8 (2021): 087802.

4. Bai, Z., et al. "Controlling Tunneling Characteristics via Bias Voltage in Bilayer Graphene/WS2/Metal Heterojunctions." Nanomaterials 12.9 (2022): 1419.


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