HfS2 (Hafnium Disulfide)
HfS2 is a semiconductor with an indirect band gap of ~2 eV. Single layer Hafnium Disulfide is predicted to have a direct band gap of ~1.2 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. HfS2 belongs to the group-IV transition metal dichalcogenides (TMDC).
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The Hafnium Disulfide crystals produced at HQ Graphene have a lateral size of ~0.6-0.8 cm, are hexagonal shaped and have a red transparent appearance.
A selection of peer review publications on the HfS2 we sell can be found below.
Crystal size | ~10 mm |
Electrical properties | Semiconductor |
Crystal structure | Hexagonal |
Unit cell parameters | a = b = 0.363 nm, c = 0.586 nm, α = β = 90°, γ = 120° |
Monolayer properties | ![]() |
Type | Synthetic |
Purity | >99.995 % |
Characterized by | XRD, Raman, EDX |
More information? | Please contact us by email or phone |
The single crystal HfS2 is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785nm Raman system
Raman, XRD and EDX on HfS2:
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HQ Graphene Wiki on:
HfS2 (Hafnium Disulfide)
1. Toru Kanazawa et al., "Few-layer HfS2 transistors", Sci. Rep. 2016, 6: 22277 (2016), link to article:
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4772098/
2. Kai Xu et al., "Ultrasensitive Phototransistors Based on Few-Layered HfS2", Adv. Mat. 27, 7881-7887 (2015), link to article:
hhttp://onlinelibrary.wiley.com/doi/10.1002/adma.201503864/full