HfS2 (Hafnium Disulfide)

HfS2 Hafnium Disulfide HfS2 is a semiconductor with an indirect band gap of ~2 eV. Single layer Hafnium Disulfide is predicted to have a direct band gap of ~1.2 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. HfS2 belongs to the group-IV transition metal dichalcogenides (TMDC). To buy HfS2 crystals please click here.

The Hafnium Disulfide crystals produced at HQ Graphene have a lateral size of ~0.6-0.8 cm, are hexagonal shaped and have a red transparent appearance. A selection of peer review publications on the HfS2 we sell can be found below.

HfS2 crystal properties
Crystal size ~8 mm
Electrical properties Semiconductor
Crystal structure Hexagonal
Unit cell parameters a = b = 0.363 nm, c = 0.586 nm, α = β = 90°, γ = 120°
Monolayer properties Link to C2DB containing calculated properties
Type Synthetic
Purity >99.995 %
Characterized by XRD, Raman, EDX
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The single crystal HfS2 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785nm Raman system

Raman, XRD and EDX on HfS2:

Click on an image to zoom

X-ray diffraction on a HfS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4

Powder X-ray diffraction (XRD) of a single crystal HfS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal HfS2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal HfS2. Measurement was performed with a 785 nm Raman system at room temperature.

HQ Graphene Wiki on:

HfS2 (Hafnium Disulfide)

1. Kowalski, R.A., et al. "Mid‐to Far‐Infrared Anisotropic Dielectric Function of HfS2 and HfSe2." Advanced Optical Materials 10.23 (2022): 2200933.

2. Jin, T., et al. "Controlling native oxidation of HfS2 for 2D materials based flash memory and artificial synapse." ACS Applied Materials & Interfaces 13.8 (2021): 10639-10649.

3. Rahman, S., et al. "Metallization and superconductivity with Tc> 12 K in transition metal dichalcogenide HfS2 under pressure." Materials Today Physics 34 (2023): 101091.


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