HfS2 (Hafnium Disulfide)
HfS2 is a semiconductor with an indirect band gap of ~2 eV. Single layer Hafnium Disulfide is predicted to have a direct band gap of ~1.2 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. HfS2 belongs to the group-IV transition metal dichalcogenides (TMDC).
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The Hafnium Disulfide crystals produced at HQ Graphene have a lateral size of ~0.6-0.8 cm, are hexagonal shaped and have a red transparent appearance.
A selection of peer review publications on the HfS2 we sell can be found below.
| Crystal size | ~8 mm |
| Electrical properties | Semiconductor |
| Crystal structure | Hexagonal |
| Unit cell parameters | a = b = 0.363 nm, c = 0.586 nm, α = β = 90°, γ = 120° |
| Monolayer properties |  Link to C2DB containing calculated properties |
| Type | Synthetic |
| Purity | >99.995 % |
| Characterized by | XRD, Raman, EDX |
| More information? | Please contact us by email or phone |
The single crystal HfS2 is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785nm Raman system
Raman, XRD and EDX on HfS2:
Click on an image to zoom
HQ Graphene Wiki on:
HfS2 (Hafnium Disulfide)
1. Kowalski, R.A., et al. "Mid‐to Far‐Infrared Anisotropic Dielectric Function of HfS2 and HfSe2." Advanced Optical Materials 10.23 (2022): 2200933.
2. Jin, T., et al. "Controlling native oxidation of HfS2 for 2D materials based flash memory and artificial synapse." ACS Applied Materials & Interfaces 13.8 (2021): 10639-10649.
3. Rahman, S., et al. "Metallization and superconductivity with Tc> 12 K in transition metal dichalcogenide HfS2 under pressure." Materials Today Physics 34 (2023): 101091.