Bi2S3 (Bismuth Sulfide)
Bi2S3 is a semiconductor with a bandgap of 1.3 - 1.7 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Bi2S3 belongs to the group-15 post-transition metal trichalcogenides.
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Bi2S3 crystal properties
| Crystal size | ~8 mm |
| Electrical properties | Semiconductor |
| Crystal structure | Orthorhombic |
| Unit cell parameters | a = 0.4025, b = 1.117 nm, c = 1.135 nm, α = β = γ = 90° |
| Monolayer properties |  Link to C2DB containing calculated properties |
| Type | Synthetic |
| Purity | >99.995% |
| Characterized by | XRD, Raman, EDX, Hall measurement |
| More information? | Please contact us by email or phone |
The single crystal Bi2S3 is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)EDX: Stoichiometric analysis
Raman: 785nm Raman system
Raman, XRD and EDX on Bi2S3:
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