Bi2S3 (Bismuth Sulfide)
Bi2S3 is a semiconductor with a bandgap of 1.3 - 1.7 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Bi2S3 belongs to the group-15 post-transition metal trichalcogenides.
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|Crystal size||~8 mm|
|Unit cell parameters||a = 0.4025, b = 1.117 nm, c = 1.135 nm, α = β = γ = 90°|
|Monolayer properties||Link to C2DB containing calculated properties|
|Characterized by||XRD, Raman, EDX, Hall measurement|
|More information?||Please contact us by email or phone|
The single crystal Bi2S3 is characterized using:XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Stoichiometric analysis
Raman: 785nm Raman system
Raman, XRD and EDX on Bi2S3:
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