1T-TaS2 (1T phase Tantalum Disulfide)

1T TaS2 Tantalum disulfide 1T-TaS2 at ambient pressure shows a metallic phase at high temperatures (>550K), an incommensurate CDW (ICCDW) phase below 550 K, a nearly commensurate CDW (NCCDW) phase below 350 K and a commensurate CDW (CCDW) phase including a Mott phase below ~180 K. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. 1T TaS2 belongs to the group-V transition metal dichalcogenides (TMDC). Please note that Tantalum Disulfide also exists as 2H phase, for more information on the 2H phase TaS2 click here.

The 1T phase TaS2 crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, hexagonal shaped and have a metallic appearance.

1T-TaS2 crystal properties
Crystal size ~8 mm
Electrical properties Semiconductor, Charge density waves (CDW) system, Mott phase
Crystal structure hexagonal
Unit cell parameters a = b = 0.336 nm, c = 0.590 nm, α = β = 90°, γ = 120°
Type Synthetic
Purity >99.995 %
Characterized by XRD, Raman, EDX
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The single crystal 1T-TaS2 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system

Raman, XRD and EDX on 1T-TaS2:

Click on an image to zoom

X-ray diffraction on a Tantalum Disulfide single crystal aligned along the (001) plane. XRD on the 1T-TaS2 was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4, 5

Powder X-ray diffraction (XRD) of a single crystal 1T-TaS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal 1T-TaS2 by Energy-dispersive X-ray spectroscopy (EDX).

HQ Graphene Wiki on:

1T TaS2 (Tantalum Disulfide)

1. Zhao, Y., et al. "Spectroscopic visualization and phase manipulation of chiral charge density waves in 1T-TaS2." Nature Communications 14.1 (2023): 2223.

2. Mohammadzadeh, A., et al. "Evidence for a thermally driven charge-density-wave transition in 1T-TaS2 thin-film devices: Prospects for GHz switching speed." Applied Physics Letters 118.9 (2021): 093102.

3. Singh, M., et al. "Lattice-driven chiral charge density wave state in 1 T− TaS 2." Physical Review B 106.8 (2022): L081407.

4. Li, Y., et al. "Electronic states of domain walls in commensurate charge density wave ground state and mosaic phase in 1T-TaS2." Chinese Physics B (2023).


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