InSe (gamma phase)
InSe is a semiconductor 2D material having a bangap of ~1.22eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers.
To buy InSe crystals please click here.
The InSe crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, hexagonal shaped and have a metallic appearance. More information about the InSe crystals we sell can be found below.
|Crystal size||~6-8 mm|
|Unit cell parameters||a = b = 0.400 nm, c = 2.497 nm, α = β = 90°, γ = 120°|
|Monolayer properties||Link to C2DB containing calculated properties|
|Characterized by||XRD, EDX|
|More information?||Please contact us by email or phone|
The single crystal InSe is characterized using:XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
XRD and EDX on InSe:
Click on an image to zoom
HQ Graphene Wiki on:
InSe (Indium Selenide)
1. Zhou, Z., et al. "Electrostatic gating of solid-ion-conductor on InSe flakes and InSe/h-BN heterostructures." Chinese Physics B 29.11 (2020): 118501.
2. Hosseini, S., et al. "Tunable Gain SnS2/InSe Van der Waals Heterostructure Photodetector." Micromachines 13.12 (2022): 2068.
3. Pasquale, G., et al. "Flat-band-induced many-body interactions and exciton complexes in a layered semiconductor." Nano Letters 22.22 (2022): 8883-8891.
4. Zeng, Y., et al. "Fully depleted vdW heterojunction based high performance photovoltaic photodetector." Journal of Materiomics (2023).