Ta2NiSe5 is a narrow-gap semiconductor with band gap of <50 meV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers.
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|Crystal size||~3 -4 mm|
|Electrical properties||Semiconductor, insulator|
|Unit cell parameters||a = 0.35 nm, b = 1.276 nm, c = 1.57 nm, α = β = γ = 90°|
|More information?||Please contact us by email or phone|