MoSSe (Molybdenum Sulfide Selenide alloy)
MoSSe alloy is a semiconductor. We have many different types of MoSSe alloys available containing a different ratio S/Se: from an alloy with a low amount of sulfur (close to 2H-MoSe2) up to high amount of sulfur (close to 2H-MoS2). The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. The Molybdenum Sulfide Selenide alloy belongs to the group-VI transition metal dichalcogenides (TMDC).
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The MoSSe crystals produced at HQ Graphene have a typical lateral size of ~0.4-6 cm, hexagonal shaped and have a metallic appearance.
Crystal size | ~6 mm |
Electrical properties | Semiconductor |
Crystal structure | Hexagonal |
Unit cell parameters | Depending on the composition in the alloy: a = b = 0.31 -0.33 nm and c = 1.21 -1.29 nm, α = β = 90°, γ = 120° |
Type | Synthetic |
Purity | >99.995 % |
Characterized by | XRD, Raman, EDX |
More information? | Please contact us by email or phone |
The single crystal MoSSe is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Raman, XRD and EDX on MoSSe alloy:
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HQ Graphene Wiki on:
MoSSe (Molybdenum Sulfide Selenide alloy)
1. Masanta, S., et al. "Monolayer Graphene-MoSSe van der Waals Heterostructure for Highly Responsive Gate-Tunable Near-Infrared-Sensitive Broadband Fast Photodetector." ACS Applied Materials & Interfaces 15.11 (2023): 14523-14531.