MoS2 (2H Molybdenum Disulfide)
MoS2 (2H phase) is a semiconductor with an indirect band gap of 1.2 eV. Monolayer MoS2 has a band gap of ~1.8 eV. Molybdenum Disulfide is used for example as a photodetector and transistor. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. MoS2 belongs to the group-VI transition metal dichalcogenides (TMDC).
To buy MoS2 crystals please click here.
The 2H phase MoS2 crystals produced at HQ Graphene have a typical lateral size of ~0.8-1 cm, hexagonal/rectangular shaped and have a metallic appearance.
We produce both n-type and p-type MoS2, having a typical charge carrier density of ~1015cm-3 at room temperature.
A selection of peer review publications on the MoS2 crystals we sell can be found below.
Crystal size | ~10 mm |
Electrical properties | Semiconductor, n-type (p-type is also available) |
Crystal structure | hexagonal |
Unit cell parameters | a = b = 0.315 nm, c = 1.229 nm, α = β = 90°, γ = 120° |
Monolayer properties | ![]() |
Type | Synthetic |
Purity | >99.995 % |
Characterized by | XRD, Raman, EDX, Hall measurement |
More information? | Please contact us by email or phone |
The single crystal MoS2 is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Hall measurement: Extraction of charge carrier density and doping in the Van der Pauw geometry.
Raman, XRD and EDX on 2H MoS2:
Click on an image to zoom




HQ Graphene Wiki on:
2H-MoS2 (Molybdenum Disulfide)
1. Beom Seo Kim et al., "Determination of the band parameters of bulk 2H-MX2 (M = Mo, W; X = S, Se) by angle-resolved photoemission spectroscopy", Nature/Scientific Reports 6, Article number: 36389 (2016), link to article:
http://www.nature.com/articles/srep36389
2. Yan Chen et al., "Optoelectronic Properties of Few-layer MoS2 FET Gated by Ferroelectric Relaxor Polymer", ACS Appl. Mater. Interfaces, 2016, 8 (47), pp 32083-32088, link to article:
http://pubs.acs.org/doi/abs/10.1021/acsami.6b10206