GaTe (Gallium Telluride)
GaTe is a semiconductor 2D material with a direct band gap of ~1.7eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. GaTe belongs to the group-13 post-transition metal monochalcogenides
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The GaTe crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, hexagonal shaped and have a metallic appearance. More information about the GaTe crystals we sell can be found below.
|Crystal size||~4-6 mm|
|Unit cell parameters||a = 0.608 nm, b = 1.053 nm, c = 1.358 nm, α = γ = 90°, β = 107.204°|
|Monolayer properties||Link to C2DB containing calculated properties|
|Characterized by||XRD, EDX|
|More information?||Please contact us by email or phone|