GaTe (Gallium Telluride)

GaTe is a semiconductor 2D material with a direct band gap of ~1.7eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. GaTe belongs to the group-13 post-transition metal monochalcogenides To buy GaTe crystals please click here.

The GaTe crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, hexagonal shaped and have a metallic appearance. More information about the GaTe crystals we sell can be found below.

GaTe crystal properties
Crystal size ~4-6 mm
Electrical properties Semiconductor
Crystal structure Monoclinic
Unit cell parameters a = 0.608 nm, b = 1.053 nm, c = 1.358 nm, α = γ = 90°, β = 107.204°
Monolayer properties Link to C2DB containing calculated properties
Type Synthetic
Purity >99.995 %
Characterized by XRD, EDX
More information? Please contact us by email or phone


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