In2Se3 (alpha phase Indium Selenide)

In2Se3 Indium Selenide 2H In2Se3 (alpha phase) is a semiconductor. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. α-In2Se3 belongs to the group-13 post-transition metal dichalcogenides (TMDC). To buy In2Se3 (alpha phase) crystals please click here.

The Indium Selenide crystals have a typical lateral size of ~0.6-0.8 cm. The crystals are hexagonal/rectangular shaped and have a metallic appearance. More information about the In2Se3 (alpha phase) crystals we sell can be found below.

In2Se3 (alpha phase) crystal properties
Crystal size ~6-8 mm
Electrical properties Semiconductor
Crystal structure Hexagonal
Unit cell parameters a = b = 0.398 nm, c = 18.89 nm, α = β = 90°, γ = 120°
Monolayer properties Link to C2DB containing calculated properties
Type Synthetic
Purity >99.995 %
Characterized by XRD, Raman, EDX
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The single crystal α-In2Se3 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX:Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785nm Raman system

Raman, XRD and EDX on α-In2Se3:

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X-ray diffraction on a 2H-In2Se3 (Indium Selenide) single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 8 XRD peaks correspond, from left to right, to (00l) with l = 4, 6, 8, 10, 12, 14, 16, 18

Powder X-ray diffraction (XRD) of a single crystal α-In2Se3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal α-In2Se3 by Energy-dispersive X-ray spectroscopy (EDX).

HQ Graphene Wiki on:

In2Se3 (alpha phase)

1. Yan, W., et al. "Nondestructive Picosecond Ultrasonic Probing of Intralayer and van der Waals Interlayer Bonding in α‐and β‐In2Se3." Advanced Functional Materials 31.50 (2021): 2106206.

2. Gao, J., et al. "Intrinsic polarization coupling in 2D α‐In2Se3 toward artificial synapse with multimode operations." SmartMat 2.1 (2021): 88-98.

3. Zhao, Y., et al. "Piezo‐Phototronic Effect in 2D α‐In2Se3/WSe2 van der Waals Heterostructure for Photodetector with Enhanced Photoresponse." Advanced Optical Materials 9.20 (2021): 2100864.

4. Zhang, Y., et al. "Analog and Digital Mode α‐In2Se3 Memristive Devices for Neuromorphic and Memory Applications." Advanced Electronic Materials 7.12 (2021): 2100609.


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