ReS2 (Rhenium Disulfide)

PtTe2 Platina Ditelluride ReS2 is a direct-bandgap semiconductor of ~1.35 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Rhenium Disulfide belongs to the group-VII transition metal dichalcogenides (TMDC). To buy ReS2 crystals please click here.

The ReS2 crystals produced at HQ Graphene typically look similar to a flower with a lateral size of ~-0.8 cm, where multiple single crystals resemble the petals and the appearance is dark metallic. We produce n-type ReS2, having a typical charge carrier density of ~1017cm-3 at room temperature. A selection of peer review publications on the ReS2 we sell can be found below.

ReS2 crystal properties
Crystal size ~8 mm
Electrical properties Semiconductor, n-type
Crystal structure Triclinic
Unit cell parameters a = 0.634, b = 0.640 nm, c = 0.645 nm, α = 106.74°, β = 119.03°, γ = 89.97°
Monolayer properties Link to C2DB containing calculated properties
Type Synthetic
Purity >99.995 %
Characterized by XRD, Raman, EDX, Hall measurement
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The single crystal ReS2 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Hall measurement: Extraction of charge carrier density and doping in the Van der Pauw geometry.

Raman, XRD and EDX on ReS2:

Click on an image to zoom

X-ray diffraction on a ReS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8

Powder X-ray diffraction (XRD) of a single crystal ReS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal ReS2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal ReS2. Measurement was performed with a 785 nm Raman system at room temperature.

HQ Graphene Wiki on:

ReS2 (Rhenium Disulfide)

1. Zhou, Y., et al. "Stacking‐Order‐Driven Optical Properties and Carrier Dynamics in ReS2." Advanced Materials 32.22 (2020): 1908311.>

2. Wang, Z., et al. "Broadband photodetector based on ReS2/graphene/WSe2 heterostructure." Nanotechnology 32.46 (2021): 465201.

3. Yu, W., et al. "Domain engineering in ReS2 by coupling strain during electrochemical exfoliation." Advanced Functional Materials 30.31 (2020): 2003057.

4. Mukherjee, B., et al. "Laser‐assisted multilevel non‐volatile memory device based on 2D van‐der‐Waals few‐layer‐ReS2/h‐BN/graphene heterostructures." Advanced Functional Materials 30.42 (2020): 2001688.


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