ReS2 (Rhenium Disulfide)
ReS2 is a direct-bandgap semiconductor of ~1.35 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Rhenium Disulfide belongs to the group-VII transition metal dichalcogenides (TMDC).
To buy ReS2 crystals please click here.
The ReS2 crystals produced at HQ Graphene typically look similar to a flower with a lateral size of ~-0.8 cm, where multiple single crystals resemble the petals and the appearance is dark metallic.
We produce n-type ReS2, having a typical charge carrier density of ~1017cm-3 at room temperature.
A selection of peer review publications on the ReS2 we sell can be found below.
| Crystal size | ~8 mm |
| Electrical properties | Semiconductor, n-type |
| Crystal structure | Triclinic |
| Unit cell parameters | a = 0.634, b = 0.640 nm, c = 0.645 nm, α = 106.74°, β = 119.03°, γ = 89.97° |
| Monolayer properties |  Link to C2DB containing calculated properties |
| Type | Synthetic |
| Purity | >99.995 % |
| Characterized by | XRD, Raman, EDX, Hall measurement |
| More information? | Please contact us by email or phone |
The single crystal ReS2 is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Hall measurement: Extraction of charge carrier density and doping in the Van der Pauw geometry.
Raman, XRD and EDX on ReS2:
Click on an image to zoom
HQ Graphene Wiki on:
ReS2 (Rhenium Disulfide)
1. Zhou, Y., et al. "Stacking‐Order‐Driven Optical Properties and Carrier Dynamics in ReS2." Advanced Materials 32.22 (2020): 1908311.>
2. Wang, Z., et al. "Broadband photodetector based on ReS2/graphene/WSe2 heterostructure." Nanotechnology 32.46 (2021): 465201.
3. Yu, W., et al. "Domain engineering in ReS2 by coupling strain during electrochemical exfoliation." Advanced Functional Materials 30.31 (2020): 2003057.
4. Mukherjee, B., et al. "Laser‐assisted multilevel non‐volatile memory device based on 2D van‐der‐Waals few‐layer‐ReS2/h‐BN/graphene heterostructures." Advanced Functional Materials 30.42 (2020): 2001688.