Bi2Se3 (Bismuth Selenide)
Bi2Se3 is a topological insulator with a band gap of ~0.3 eV for bulk crystals. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Bi2Se3 belongs to the group-15 post-transition metal trichalcogenides.
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The Bi2Se3 crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm and have a metallic appearance.
| Crystal size | ~8 mm |
| Electrical properties | Topological insulator |
| Crystal structure | Rhombohedral |
| Unit cell parameters | a = b = 0.413, c = 2.856 nm, α = β = 90°, γ = 120° |
| Type | Synthetic |
| Purity | >99.995% |
| Characterized by | XRD, Raman, EDX |
| More information? | Please contact us by email or phone |
The single crystal Bi2Se3 is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)EDX: Stoichiometric analysis
Raman: 785nm Raman system
Raman, XRD and EDX on Bi2Se3:
Click on an image to zoom
HQ Graphene Wiki on:
Bi2Se3 (Bismuth Selenide)
1. Wang, W., et al., "Temperature dependence of nanoscale friction on topological insulator Bi2Se3 surfaces." Nanotechnology 33.39 (2022): 395706.
2. Liebig, A., et al. "Structural Characterization of Defects in the Topological Insulator Bi2Se3 at the Picometer Scale." The Journal of Physical Chemistry C (2022).
3. Kuo, Cheng-Tai, et al. "Orbital contributions in the element-resolved valence electronic structure of Bi2Se3." Physical Review B 104.24 (2021): 245105.
4. Cucini, Riccardo, et al. "Space charge free ultrafast photoelectron spectroscopy on solids by a narrowband tunable extreme ultraviolet light source." arXiv preprint arXiv:1910.05074 (2019).