Ta2NiSe5
Ta2NiSe5 is a narrow-gap semiconductor with band gap of <50 meV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers.
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Ta2NiSe5 crystal properties
| Crystal size | ~3 -4 mm |
| Electrical properties | Semiconductor, insulator |
| Crystal structure | Monoclinic |
| Unit cell parameters | a = 0.35 nm, b = 1.276 nm, c = 1.57 nm, α = β = γ = 90° |
| Type | Synthetic |
| Purity | >99.995 % |
| More information? | Please contact us by email or phone |