Ta2NiSe5 Ta2NiSe5 is a narrow-gap semiconductor with band gap of <50 meV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. To buy Ta2NiSe5 crystals please click here.

Ta2NiSe5 crystal properties
Crystal size ~3 -4 mm
Electrical properties Semiconductor, insulator
Crystal structure Monoclinic
Unit cell parameters a = 0.35 nm, b = 1.276 nm, c = 1.57 nm, α = β = γ = 90°
Type Synthetic
Purity >99.995 %
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