MoTe2 (2H Molybdenum Ditelluride)
2H MoTe2 (alpha phase MoTe2) is a semiconductor and a diamagnetic system with an indirect band gap of ~1.2 eV. Monolay 2H-MoTe2 have a direct band gap which is inversely proportional to the number of layers. It is a direct band gap material only for single layer or bilayer. Note that Molybdenum Ditelluride also exist in the 1T' MoTe2 phase which is a semi-metal (for more information on 1T' MoTe2 click here ). The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. MoTe2 belongs to the group-VI transition metal dichalcogenides (TMDC).
To buy MoTe2 crystals please click here.
The α-MoTe2 crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, are hexagonal shaped and have a metallic appearance.
The 2H MoTe2 is a n-type semiconductor, having a typical charge carrier density of ~1017cm-3 at room temperature.
A selection of peer review publications on the MoTe2 crystals we sell can be found below.
| Crystal size | ~10 mm |
| Electrical properties | Semiconductor, n-type |
| Crystal structure | Hexagonal |
| Unit cell parameters | a = b = 0.353 nm, c = 1.396 nm, α = β = 90, γ = 120° |
| Monolayer properties |  Link to C2DB containing calculated properties |
| Type | Synthetic |
| Purity | >99.995 % |
| Characterized by | XRD, Raman, EDX, Hall measurement |
| More information? | Please contact us by email or phone |
The single crystal 2H MoTe2 is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Hall measurement: Extraction of charge carrier density and doping in the Van der Pauw geometry.
Raman, XRD and EDX on 2H MoTe2:
Click on an image to zoom
HQ Graphene Wiki on:
2H MoTe2 (Molybdenum ditelluride)
1. Wang, Y., et al. "Atomistic observation of the local phase transition in MoTe2 for application in homojunction photodetectors." Small 18.19 (2022): 2200913.
2. Aftab, S., et al. "Lateral PIN (p-MoTe2/Intrinsic-MoTe2/n-MoTe2) Homojunction Photodiodes." ACS Applied Nano Materials 5.5 (2022): 6455-6462.
3. Sheina, V., et al. "Hydrogenic spin-valley states of the bromine donor in 2H-MoTe2." Communications Physics 6.1 (2023): 135.
4. Zhang, X., et al. "All‐van‐der‐Waals Barrier‐Free Contacts for High‐Mobility Transistors." Advanced Materials 34.34 (2022): 2109521.