GeSe (Germanium Selenide)

GeSe Germanium Selenide GeSe is a semiconductor with an indirect band gap ~1.1 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Germanium Selenide belongs to the group-VI transition metal monochalcogenides.

The GeSe crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, are rectangular shaped and have a metallic appearance.

GeSe publications

GeSe crystal properties

Crystal size	~10 mm
Electrical properties	Semiconductor
Crystal structure	Orthorhombic
Unit cell parameters	a = 0.383 nm, b = 0.440 nm, c = 1.078 nm, α = β = γ = 90°
Monolayer properties	Link to C2DB containing calculated properties
Type	Synthetic
Purity	>99.995 %
Characterized by	XRD, Raman, EDX
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GeSe Pricing

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The single crystal GeSe is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system

Raman, XRD and EDX on GeSe:

Click on an image to zoom

X-ray diffraction on a GeSe single crystal aligned along the (100) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (h00) with h = 2, 4, 6, 8

Powder X-ray diffraction (XRD) of a single crystal GeSe. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal GeSe by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal GeSe. Measurement was performed with a 785 nm Raman system at room temperature.

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