GeSe (Germanium Selenide)
GeSe is a semiconductor with an indirect band gap ~1.1 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Germanium Selenide belongs to the group-VI transition metal monochalcogenides.
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The GeSe crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, are rectangular shaped and have a metallic appearance.
|Crystal size||~6-8 mm|
|Unit cell parameters||a = 0.383 nm, b = 0.440 nm, c = 1.078 nm, α = β = γ = 90°|
|Monolayer properties||Link to C2DB containing calculated properties|
|Characterized by||XRD, Raman, EDX|
|More information?||Please contact us by email or phone|
The single crystal GeSe is characterized using:XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Raman, XRD and EDX on GeSe:
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HQ Graphene Wiki on:
GeSe (Germanium selenide)
1. Chen, Z., et al. "Ultrafast dynamics with time-resolved ARPES: photoexcited electrons in monochalcogenide semiconductors." Comptes Rendus. Physique 22.S2 (2021): 1-8.
2. Yan, B., et al. "Preparation and photoelectric characterization of p-GeSe/p-WS2 heterojunction devices." Journal of Physics D: Applied Physics 55.32 (2022): 325101.
3. Afzal, A.M., et al. "Ultrafast and highly stable photodetectors based on p-GeSe/n-ReSe2 heterostructures." ACS Applied Materials & Interfaces 13.40 (2021): 47882-47894.
4. Grodzicki, M., et al. "Band Alignments of GeS and GeSe Materials." Crystals 12.10 (2022): 1492.