CuInP2S6 (CIPS)
CuInP2S6 is a ferroelectric semiconductor 2D material having a Curie temperature of ~315K. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers.
To buy CuInP2S6 crystals please click here.
The CuInP2S6 crystals produced at HQ Graphene have a typical lateral size of ~0.1-0.3 cm, hexagonal shaped and have a yellow appearance.
More information about the CuInP2S6 crystals we sell can be found below.
Crystal size | ~2-3 mm (multiple crystals will be shipped in one order) |
Electrical properties | Ferroelectric semiconductor (Curie temperature ~315K) |
Crystal structure | Monoclinic |
Unit cell parameters | a = 0.608 nm, b = 1.053 nm, c = 1.358 nm, α = γ = 90°, β = 107.204° |
Monolayer properties | Link to C2DB containing calculated properties |
Type | Synthetic |
Purity | >99.995 % |
Characterized by | XRD, EDX |
More information? | Please contact us by email or phone |
The single crystal CuInP2S6 is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
XRD and EDX on CuInP2S6:
Click on an image to zoom
HQ Graphene Wiki on:
CuInP2S6 (CIPS)
1. Dey, A., et al. "Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6." 2D Materials 9.3 (2022): 035003.
2. Li, B., et al. "An electronic synapse based on 2D ferroelectric CuInP2S6." Advanced Electronic Materials 6.12 (2020): 2000760.
3. Ma, R.R., et al. "High-speed ultraviolet photodetectors based on 2D layered CuInP2S6 nanoflakes." Applied Physics Letters 117.13 (2020): 131102.
4. Mao, X., et al. "Nonvolatile Electric Control of Exciton Complexes in Monolayer MoSe2 with Two-Dimensional Ferroelectric CuInP2S6." ACS Applied Materials & Interfaces 13.20 (2021): 24250-24257.