GeS (Germanium sulfide)
GeS is a semiconductor with an indirect band gap of 1.6 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. GeS belongs to the group-14 transition metal monochalcogenides.
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The GeS crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, are rectangular shaped and have a metallic appearance.
GeS crystal properties
| Crystal size | ~6-8 mm |
| Electrical properties | Semiconductor |
| Crystal structure | Orthorhombic |
| Unit cell parameters | a = 1.450, b = 0.364 nm, c = 0.430 nm, α = β = γ = 90° |
| Monolayer properties |  Link to C2DB containing calculated properties |
| Type | Synthetic |
| Purity | >99.995 % |
| Characterized by | XRD, Raman, EDX |
| More information? | Please contact us by email or phone |
The single crystal GeS is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)EDX:Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Raman, XRD and EDX on GeS:
Click on an image to zoom
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GeS (Germanium sulfide)
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