MoWSe2 (Molybdenum Tungsten Diselenide alloy)

MoWSe2 Molybdenum Tungsten Diselenide alloy MoWSe2 alloy is a semiconductor. We have many different types of MoWSe2 alloys available containing a different ratio Mo/W: ranging from alloys which are rich in Tungsten (close to 2H-WSe2) to alloys with a high Molybdenum content (close to 2H-MoSe2). The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Molybdenum Tungsten Diselenide alloy belongs to the group-VI transition metal dichalcogenides (TMDC). To buy MoWSe2 crystals please click here.

The MoWSe2 crystals produced at HQ Graphene have a typical lateral size of ~0.6 cm, are hexagonal shaped and have a dark metallic appearance.

MoWSe2 crystal properties
Crystal size ~6 mm
Electrical properties Semiconductor
Crystal structure Hexagonal
Unit cell parameters Depending on the composition in the alloy: a = b = 0.31 -0.33 nm and c = 1.21 -1.30 nm, α = β = 90°, γ = 120°
Type Synthetic
Purity >99.995%
Characterized by XRD, Raman, EDX, Hall measurement
More information? Please contact us by email or phone

The single crystal MoWSe2 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system

Raman, XRD and EDX on MoWSe2:

Click on an image to zoom

X-ray diffraction on a MoWSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10

Powder X-ray diffraction (XRD) of a single crystal MoWSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal MoWSe2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal MoWSe2. Measurement was performed with a 785 nm Raman system at room temperature.

HQ Graphene Wiki on:

MoWSe2 (Molybdenum Tungsten Diselenide alloy)

1. Ma, Li, et al. "In situ strain electrical atomic force microscopy study on two‐dimensional ternary transition metal dichalcogenides." InfoMat 4.7 (2022): e12310.

2. Bampoulis, Pantelis, et al. "Local Conduction in Mo x W1-x Se2: The Role of Stacking Faults, Defects, and Alloying." ACS applied materials & interfaces 10.15 (2018): 13218-13225.


HQ Graphene is a company registered in The Netherlands, Europe under the number KVK 84852437.


All pictures of crystals on this website are copyright protected by HQgraphene

Design and copyright

Copyright © 2016-2024 HQ graphene | Design by Devastating Concepts