SnSe2 (Tin Diselenide)

SnSe2 Tin Diselenide SnSe2 is a semiconductor having an indirect bandgap. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Tin Diselenide belongs to the group-14 post-transition metal dichalcogenides. To buy SnSe2 crystals please click here.

The SnSe2 crystals produced at HQ Graphene have a lateral size of ~0.8 cm and have a metallic appearance. More information about the SnSe2 crystals we sell can be found below.

SnSe2 crystal properties
Crystal size ~8 mm
Electrical properties Semiconductor
Crystal structure Hexagonal
Unit cell parameters a = b = 0.381, c = 0.614 nm, α = β = 90°, γ = 120°
Monolayer properties Link to C2DB containing calculated properties
Type Synthetic
Purity >99.995 %
Characterized by XRD, Raman, EDX
More information? Please contact us by email or phone

The single crystal SnSe2 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system

Raman, XRD and EDX on SnSe2:

Click on an image to zoom

X-ray diffraction on a SnSe2 single crystal aligned along the (001) plane. XRD diffraction was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4, 5

Powder X-ray diffraction (XRD) of a single crystal SnSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal SnSe2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal SnSe2. Measurement was performed with a 785 nm Raman system at room temperature.

HQ Graphene Wiki on:

SnSe2 (Tin Diselenide)

1. Xiao, P., et al. "Anisotropic thermal conductivity of crystalline layered SnSe2." Nano Letters 21.21 (2021): 9172-9179.

2. Abderrahmane, A., et al. "Low Power Consumption Gate-Tunable WSe2/SnSe2 van der Waals Tunnel Field-Effect Transistor." Electronics 11.5 (2022): 833.

3. Sun, Y., et al. "Highly sensitive infrared polarized photodetector enabled by out-of-plane PSN architecture composing of p-MoTe 2, semimetal-MoTe 2 and n-SnSe 2." Nano Research (2022): 1-8.

4. Pallecchi, I., et al. "Investigation and field effect tuning of thermoelectric properties of SnSe 2 flakes." Physical Review Materials 7.5 (2023): 054004.


HQ Graphene is a company registered in The Netherlands, Europe under the number KVK 84852437.


All pictures of crystals on this website are copyright protected by HQgraphene

Design and copyright

Copyright © 2016-2024 HQ graphene | Design by Devastating Concepts