GeP (Germanium Phosphide)

Germanium Phosphide GeP is a semiconductor 2D material having a bandgap of ~1.68eV for monolayers and ~0.51eV for bulk crystals. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. To buy GeP crystals please click here.

The GeP crystals produced at HQ Graphene have a typical lateral size of ~0.1-0.3 cm, hexagonal shaped and have a metallic appearance. More information about the GeP crystals we sell can be found below.

GeP crystal properties
Crystal size ~3 mm
Electrical properties Semiconductor
Crystal structure Monoclinic
Unit cell parameters a = 1.519 nm, b = 0.368 nm, c = 0.918 nm, α = γ = 90°, β = 101.560°
Type Synthetic
Purity >99.995 %
Characterized by XRD, EDX
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The single crystal GeP is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis

XRD and EDX on GeP:

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Powder X-ray diffraction (XRD) of a single crystal GeP. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal GeP by Energy-dispersive X-ray spectroscopy (EDX).


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