GeP (Germanium Phosphide)
GeP is a semiconductor 2D material having a bandgap of ~1.68eV for monolayers and ~0.51eV for bulk crystals. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers.
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The GeP crystals produced at HQ Graphene have a typical lateral size of ~0.1-0.3 cm, hexagonal shaped and have a metallic appearance. More information about the GeP crystals we sell can be found below.
|Unit cell parameters
|a = 1.519 nm, b = 0.368 nm, c = 0.918 nm, α = γ = 90°, β = 101.560°
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The single crystal GeP is characterized using:XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
XRD and EDX on GeP:
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