HfSe2 (Hafnium Diselenide)
HfSe2 is a semiconductor with an indirect bandgap of ~1.1 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Hafnium Diselenide belongs to the group-IV transition metal dichalcogenides (TMDC).
To buy hafnium diselenide crystals please click here.
The HfSe2 crystals produced at HQ Graphene have a lateral size of ~0.6-0.8 cm, are hexagonal shaped, and have a metallic appearance.
A selection of peer review publications on the HfSe2 crystals we sell can be found below.
| Crystal size | ~10 mm |
| Electrical properties | Semiconductor |
| Crystal structure | Hexagonal |
| Unit cell parameters | a = b = 0.3745 nm, c = 0.6160 nm, α = β = 90°, γ = 120° |
| Monolayer properties |  Link to C2DB containing calculated properties |
| Type | Synthetic |
| Purity | >99.995 % |
| Characterized by | XRD, Raman, EDX |
| More information? | Please contact us by email or phone |
The single crystal HfSe2 is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Raman, XRD and EDX on HfSe2:
Click on an image to zoom
HQ Graphene Wiki on:
HfSe2 (Hafnium Diselenide)
1. Moonshik Kang et al., "Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment", Nanoscale (2016), link to article:
http://pubs.rsc.org/en/content/articlehtml/2016/nr/c6nr08467b
2. Lei Yin et al., "Ultrafast and ultrasensitive phototransistors based on few-layered HfSe2", APL 109, 213105 (2016), link to article:
http://aip.scitation.org/doi/abs/10.1063/1.4968808