HfSe2 (Hafnium Diselenide)
HfSe2 is a semiconductor with an indirect bandgap of ~1.1 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Hafnium Diselenide belongs to the group-IV transition metal dichalcogenides (TMDC).
To buy hafnium diselenide crystals please click here.
The HfSe2 crystals produced at HQ Graphene have a lateral size of ~0.6-0.8 cm, are hexagonal shaped, and have a metallic appearance.
A selection of peer review publications on the HfSe2 crystals we sell can be found below.
Crystal size | ~8 mm |
Electrical properties | Semiconductor |
Crystal structure | Hexagonal |
Unit cell parameters | a = b = 0.3745 nm, c = 0.6160 nm, α = β = 90°, γ = 120° |
Monolayer properties | Link to C2DB containing calculated properties |
Type | Synthetic |
Purity | >99.995 % |
Characterized by | XRD, Raman, EDX |
More information? | Please contact us by email or phone |
The single crystal HfSe2 is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Raman, XRD and EDX on HfSe2:
Click on an image to zoom
HQ Graphene Wiki on:
HfSe2 (Hafnium Diselenide)
1. Farahani, A.S. Negative Differential Resistance in Two-Dimensional Materials Based Vertical Heterostructures. Diss. The University of Utah, 2020.
2. Kowalski, R.A., et al. "Mid‐to Far‐Infrared Anisotropic Dielectric Function of HfS2 and HfSe2." Advanced Optical Materials 10.23 (2022): 2200933.
3. Yin, L., et al. "Two-dimensional unipolar memristors with logic and memory functions." Nano letters 20.6 (2020): 4144-4152.