P-As (Phosphor-Arsenic alloy)
Phosphor Arsenic alloy is a semiconductor with a tuneable bandgap. We have different types of P-As alloys available containing a different ratio P/As. For low amounts of As the crystal can still be cleaved as a 2D crystal and the unit cell parameters are similar to black phosphorus. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers.
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The P-As crystals produced at HQ Graphene have a typical lateral size of ~0.1 cm and have a metallic appearance.
| Crystal size | ~ 1 mm |
| Electrical properties | Semiconductor |
| Crystal structure | Orthorhombic |
| Unit cell parameters | Depends on the composition in the alloy. For P/As ratio of ~1 : a = b = 0.338 nm, b = 10.743 nm, c = 0.446 nm, α = β = γ = 90° |
| Type | Synthetic |
| Purity | >99.995% |
| Characterized by | XRD, Raman, EDX |
| More information? | Please contact us by email or phone |
The single crystal P-As is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Raman, XRD and EDX on P-As:
Click on an image to zoom
HQ Graphene Wiki on:
P-As (Phosphor-Arsenic alloy)
1. Amani, M., et al. "Mid-wave infrared photoconductors based on black phosphorus-arsenic alloys." ACS nano 11.11 (2017): 11724-11731.