SnS2 (2H Tin Disulfide)
2H-SnS2 is a semiconductor with an indirect band gap of ~2.2 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. SnS2 belongs to the group-14 post-transition metal dichalcogenides.
To buy SnS2 crystals please click here.
The 2H phase Tin Disulfide crystals produced at HQ Graphene have a lateral size of ~0.6-0.8 cm, are transparent and are yellow colored."
More information about the SnS2 crystals we sell can be found below.
| Crystal size | ~8 mm |
| Electrical properties | Semiconductor (~2.2eV) |
| Crystal structure | Hexagonal |
| Unit cell parameters | a = b = 0.364, c = 0.589 nm, α = β = 90°, γ = 120° |
| Type | Synthetic |
| Purity | >99.995% |
| Characterized by | XRD, Raman, EDX |
| More information? | Please contact us by email or phone |
The single crystal SnS2 is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Raman, XRD and EDX on 2H-SnS2:
Click on an image to zoom
HQ Graphene Wiki on:
SnS2 (Tin Disulfide)
1. Yan, W., et al. "Enhanced NO2 sensitivity in Schottky-contacted n-type SnS2 gas sensors." ACS applied materials & interfaces 12.23 (2020): 26746-26754.
2. Rehman, S., et al. "Analog-digital hybrid computing with SnS2 memtransistor for low-powered sensor fusion." Nature Communications 13.1 (2022): 2804.
3. Gao, J., et al. "Out‐of‐plane homojunction enabled high performance SnS2 lateral phototransistor." Advanced Optical Materials 8.9 (2020): 1901971.
4. Rehman, S., et al. "Energy-efficient and reconfigurable complementary filter based on analog-digital hybrid computing with SnS2 memtransistor." Nano Energy 109 (2023): 108333.