GaS (beta phase Gallium sulfide)

GaS Gallium Sulfide GaS (beta phase) is a semiconductor with an indirect band gap of ~2.6 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. α-GaS belongs to the group-13 post-transition metal monochalcogenides. To buy GaS crystals please click here.

The Gallium sulfide crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm. The crystals are yellow colored and transparent.

GaS crystal properties
Crystal size ~8 mm
Electrical properties Semiconductor
Crystal structure Hexagonal
Unit cell parameters a = 0.360, b = 0.360 nm, c = 1.553 nm, α = β = 90°, γ = 120°
Monolayer properties Link to C2DB containing calculated properties
Type Synthetic
Purity >99.995 %
Characterized by XRD, Raman, EDX
More information? Please contact us by email or phone

The single crystal GaS is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system

Raman, XRD and EDX on GaS:

Click on an image to zoom

X-ray diffraction on a GaS single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10, 12, 14

Powder X-ray diffraction (XRD) of a single crystal GaS. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal alpha phase GaS by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal GaS. Measurement was performed with a 785 nm Raman system at room temperature.

HQ Graphene Wiki on:

GaS (Gallium sulfide)

1. Gutiérrez, Y., et al. "Exploring the thickness-dependence of the properties of layered gallium sulfide." Frontiers in Chemistry 9 (2021): 781467.

2. Gutiérrez, Y., et al. "Layered gallium sulfide optical properties from monolayer to CVD crystalline thin films." Optics Express 30.15 (2022): 27609-27622.

3. Zhong, W., et al. "Suspended few-layer GaS photodetector with sensitive fast response." Materials & Design 212 (2021): 110233.


HQ Graphene is a company registered in The Netherlands, Europe under the number KVK 84852437.


All pictures of crystals on this website are copyright protected by HQgraphene

Design and copyright

Copyright © 2016-2024 HQ graphene | Design by Devastating Concepts