WSe2 (Tungsten Diselenide)

WSe2 Tungsten Diselenide WSe2 is a semiconductor with an indirect band gap of ~1.3 eV, monolayer WSe2 has a direct band gap. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Tungsten Diselenide belongs to the group-VI transition metal dichalcogenides (TMDC). To buy WSe2 crystals please click here.

The WSe2 crystals produced at HQ Graphene have a typical lateral size of ~0.8-1 cm, are hexagonal shaped and have a metallic appearance. We produce both n-type and p-type WSe2, having typical charge carrier densities of ~1015cm-3 at room temperature. A selection of peer review publications on the WSe2 we sell can be found below.


WSe2 crystal properties
Crystal size ~10 mm
Electrical properties Semiconductor, p-type (we also have n-type available)
Crystal structure hexagonal
Unit cell parameters a = b = 0.328 nm, c = 1.298 nm, α = β = 90°, γ = 120°
Type Synthetic
Purity >99.995 %
Characterized by XRD, Raman, EDX, Hall measurement
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The single crystal WSe2 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Hall measurement: Extraction of charge carrier density and doping in the Van der Pauw geometry.

Raman, XRD and EDX on WSe2:

Click on an image to zoom


X-ray diffraction on a WSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10

Powder X-ray diffraction (XRD) of a single crystal WSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal WSe2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal WSe2. Measurement was performed with a 785 nm Raman system at room temperature.





HQ Graphene Wiki on:

WSe2 (Tungsten Diselenide)


1. H.C.P. Movva et al. "High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors ", ACS Nano, 2015, 9(10), 10402-10410, link to article:
http://pubs.acs.org/doi/abs/10.1021/acsnano.5b04611?journalCode=ancac3

2. B. Fallahazad et al. "Shubnikov-de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe2: Landau Level Degeneracy, Effective Mass, and Negative Compressibility", Phys. Rev. Lett. 116, 086601 (2016), (also available on arxiv.org/pdf/1602.01073.pdf) link to article:
http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.116.086601

3. R. Bertoni et al. "Generation and Evolution of Spin-, Valley-, and Layer-Polarized Excited Carriers in Inversion-Symmetric WSe2", Phys. Rev. Lett. 117, 277201 (2016), (also available on arxiv.org/abs/1606.03218) link to article:
http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.117.277201

Company

HQ Graphene is a company registered in The Netherlands, Europe under the number KVK 59652233.

Pictures

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