WS2 (2H Tungsten Disulfide)

2H WS2 Tungsten Disulfide 2H-WS2 is a semiconductor with an indirect band gap of ~1.3 eV. Monolayer 2H-WS2 has a direct band gap. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Tungsten Disulfide belongs to the group-VI transition metal dichalcogenides (TMDC). To buy WS2 crystals please click here.

The 2H phase WS2 crystals produced at HQ Graphene have a typical lateral size of ~0.8-1 cm, are hexagonal shaped and have a metallic appearance. The 2H WS2 is n-type semiconductor, having a typical charge carrier density of ~1014cm-3 at room temperature. A selection of peer review publications on the WS2 crystals we sell can be found below.


2H-WS2 crystal properties
Crystal size ~10 mm
Electrical properties Semiconductor, n-type
Crystal structure hexagonal
Unit cell parameters a = b = 0.315 nm, c = 1.227 nm, α = β = 90, γ = 120°
Type Synthetic
Purity >99.995 %
Characterized by XRD, Raman, EDX, Hall measurement
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The single crystal 2H WS2 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Hall measurement: Extraction of charge carrier density and doping in the Van der Pauw geometry.

Raman, XRD and EDX on 2H-WS2:

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X-ray diffraction on a single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10

Powder X-ray diffraction (XRD) of a single crystal 2H-WS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal 2H-WS2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal 2H-WS2. Measurement was performed with a 785 nm Raman system at room temperature.





HQ Graphene Wiki on:

2H phase WS2 (Tungsten disulfide)


1. Shaojun Wang et al., "Coherent Coupling of WS2 Monolayers with Metallic Photonic Nanostructures at Room Temperature" Nano Lett. 16 (7), link to article:
http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b01475

2. Gerd Plechingeret al., "Excitonic valley effects in monolayer WS2 under high magnetic fields", Nano Lett., 2016, 16 (12), pp 7899-7904, link to article:
http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b04171

3. Beom Seo Kim et al., "Determination of the band parameters of bulk 2H-MX2 (M = Mo, W; X = S, Se) by angle-resolved photoemission spectroscopy", Nature/Scientific Reports 6, Article number: 36389 (2016), link to article:
http://www.nature.com/articles/srep36389

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