HfSe2 (Hafnium Diselenide)

HfSe2 Hafnium Diselenide HfSe2 is a semiconductor with an indirect bandgap of ~1.1 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Hafnium Diselenide belongs to the group-IV transition metal dichalcogenides (TMDC). To buy hafnium diselenide crystals please click here.

The HfSe2 crystals produced at HQ Graphene have a lateral size of ~0.6-0.8 cm, are hexagonal shaped, and have a metallic appearance. A selection of peer review publications on the HfSe2 crystals we sell can be found below.


HfSe2 crystal properties
Crystal size ~10 mm
Electrical properties Semiconductor
Crystal structure Hexagonal
Unit cell parameters a = b = 0.3745 nm, c = 0.6160 nm, α = β = 90°, γ = 120°
Type Synthetic
Purity >99.995 %
Characterized by XRD, Raman, EDX
More information? Please contact us by email or phone


The single crystal HfSe2 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system

Raman, XRD and EDX on HfSe2:

Click on an image to zoom


X-ray diffraction on a Hafnium Diselenide single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 3, 4, 5

Powder X-ray diffraction (XRD) of a single crystal HfSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal HfSe2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal HfSe2. Measurement was performed with a 785 nm Raman system at room temperature.





HQ Graphene Wiki on:

HfSe2 (Hafnium Diselenide)


1. Moonshik Kang et al., "Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment", Nanoscale (2016), link to article:
http://pubs.rsc.org/en/content/articlehtml/2016/nr/c6nr08467b

2. Lei Yin et al., "Ultrafast and ultrasensitive phototransistors based on few-layered HfSe2", APL 109, 213105 (2016), link to article:
http://aip.scitation.org/doi/abs/10.1063/1.4968808

Company

HQ Graphene is a company registered in The Netherlands, Europe under the number KVK 59652233.

Pictures

All pictures of crystals on this website are copyright protected by HQgraphene

Design and copyright

Copyright © 2016-2017 HQ graphene | Design by Devastating Concepts