GaSe (2H phase Gallium Selenide)

GaSe Gallium Selenide GaSe (2H phase) is a semiconductor with an indirect band gap of ~2.1 eV. GaSe has been used as a semiconductor, photoconductor, a second harmonic generation crystal in nonlinear optics and as a far-infrared conversion material. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. GaSe belongs to the group-13 post-transition metal monochalcogenides.

The 2H phase of Gallium Selenide has a typical lateral size of ~0.6-0.8 cm and has a dark-copper metallic appearance.


2H phase GaSe crystal properties
Crystal size ~10 mm
Electrical properties Semiconductor
Crystal structure Hexagonal
Unit cell parameters a = b = 0.374 nm, c = 1.592 nm, α = β = 90°, γ =120°
Type Synthetic
Purity >99.995 %
Characterized by XRD, Raman, EDX
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The single crystal GaSe is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX:Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system

Raman, XRD and EDX on GaSe:

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X-ray diffraction on a GaSe single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (001) with h = 4, 6, 8, 10, 12

Powder X-ray diffraction (XRD) of a single crystal GaSe. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal GaSe by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal GaSe. Measurement was performed with a 785 nm Raman system at room temperature.





HQ Graphene Wiki on:

GaSe (Gallium selenide)


1. Pil Ju Ko et al., "Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector", Nanotechnology 27 (32), 325202 (2016), link to article:
http://iopscience.iop.org/article/10.1088/0957-4484/27/32/325202/meta

2. Yecun Wu et al., "Simultaneous large continuous band gap tunability and photoluminescence enhancement in GaSe nanosheets via elastic strain engineering", Nano Energy 32, 157-164 (2017), link to article:
http://www.sciencedirect.com/science/article/pii/S2211285516305973

2. Hai Huang et al., "Highly sensitive phototransistor based on GaSe nanosheets", APL 107, 143112 (2015), link to article:
http://scitation.aip.org/content/aip/journal/apl/107/14/10.1063/1.4933034

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