GaSe (2H phase Gallium Selenide)
GaSe (2H phase) is a semiconductor with an indirect band gap of ~2.1 eV. GaSe has been used as a semiconductor, photoconductor, a second harmonic generation crystal in nonlinear optics and as a far-infrared conversion material.
The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. GaSe belongs to the group-13 post-transition metal monochalcogenides.
The 2H phase of Gallium Selenide has a typical lateral size of ~0.6-0.8 cm and has a dark-copper metallic appearance.
|Crystal size||~10 mm|
|Unit cell parameters||a = b = 0.374 nm, c = 1.592 nm, α = β = 90°, γ =120°|
|Characterized by||XRD, Raman, EDX|
|More information?||Please contact us by email or phone|
The single crystal GaSe is characterized using:XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX:Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Raman, XRD and EDX on GaSe:
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GaSe (Gallium selenide)
1. Pil Ju Ko et al., "Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector", Nanotechnology 27 (32), 325202 (2016), link to article:
2. Yecun Wu et al., "Simultaneous large continuous band gap tunability and photoluminescence enhancement in GaSe nanosheets via elastic strain engineering", Nano Energy 32, 157-164 (2017), link to article:
2. Hai Huang et al., "Highly sensitive phototransistor based on GaSe nanosheets", APL 107, 143112 (2015), link to article: