GeS (Germanium sulfide)

GeS Germanium Sulfide GeS is a semiconductor with an indirect band gap of 1.6 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. GeS belongs to the group-14 transition metal monochalcogenides.

The GeS crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, are rectangular shaped and have a metallic appearance.

GeS crystal properties
Crystal size ~10 mm
Electrical properties Semiconductor
Crystal structure Orthorhombic
Unit cell parameters a = 1.450, b = 0.364 nm, c = 0.430 nm, α = β = γ = 90°
Type Synthetic
Purity >99.995 %
Characterized by XRD, Raman, EDX
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The single crystal GeS is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX:Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system

Raman, XRD and EDX on GeS:

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X-ray diffraction on a single crystal GeS aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (h00) with h = 2, 4, 6, 8

Powder X-ray diffraction (XRD) of a single crystal GeS. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal GeS by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal GeS. Measurement was performed with a 785 nm Raman system at room temperature.

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GeS (Germanium sulfide)

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