GaTe Gallium Telluride

GaTe is a semiconductor 2D material with a direct band gap of ~2.1eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. GaTe belongs to the group-13 post-transition metal monochalcogenides To buy GaTe crystals please click here.

The GaTe crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, hexagonal shaped and have a metallic appearance. More information about the GaTe crystals we sell can be found below.

GaTe crystal properties
Crystal size ~6-8 mm
Electrical properties Semiconductor
Crystal structure Monoclinic
Unit cell parameters a = 0.608 nm, b = 1.053 nm, c = 1.358 nm, α = γ = 90°, β = 107.204°
Monolayer properties Link to C2DB containing calculated properties
Type Synthetic
Purity >99.995 %
Characterized by XRD, EDX
More information? Please contact us by email or phone

The single crystal CuInP2S6 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis

XRD and EDX on CuInP2S6:

Click on an image to zoom

Powder X-ray diffraction (XRD) of a single crystal CuInP2S6. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal CuInP2S6 by Energy-dispersive X-ray spectroscopy (EDX).

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