GaTe Gallium Telluride
GaTe is a semiconductor 2D material with a direct band gap of ~2.1eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. GaTe belongs to the group-13 post-transition metal monochalcogenides
To buy GaTe crystals please click here.
The GaTe crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, hexagonal shaped and have a metallic appearance.
More information about the GaTe crystals we sell can be found below.
GaTe crystal properties
| Crystal size | ~6-8 mm |
| Electrical properties | Semiconductor |
| Crystal structure | Monoclinic |
| Unit cell parameters | a = 0.608 nm, b = 1.053 nm, c = 1.358 nm, α = γ = 90°, β = 107.204° |
| Monolayer properties |  Link to C2DB containing calculated properties |
| Type | Synthetic |
| Purity | >99.995 % |
| Characterized by | XRD, EDX |
| More information? | Please contact us by email or phone |
The single crystal CuInP2S6 is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
XRD and EDX on CuInP2S6:
Click on an image to zoom
HQ Graphene Wiki on:
CuInP2S6 (CIPS)
1. Publications to be added soon!