HfS2 (Hafnium Disulfide)

HfS2 Hafnium Disulfide HfS2 is a semiconductor with an indirect band gap of ~2 eV. Single layer Hafnium Disulfide is predicted to have a direct band gap of ~1.2 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. HfS2 belongs to the group-IV transition metal dichalcogenides (TMDC). To buy HfS2 crystals please click here.

The Hafnium Disulfide crystals produced at HQ Graphene have a lateral size of ~0.6-0.8 cm, are hexagonal shaped and have a red transparent appearance. A selection of peer review publications on the HfS2 we sell can be found below.

HfS2 crystal properties
Crystal size ~10 mm
Electrical properties Semiconductor
Crystal structure Hexagonal
Unit cell parameters a = b = 0.363 nm, c = 0.586 nm, α = β = 90°, γ = 120°
Type Synthetic
Purity >99.995 %
Characterized by XRD, Raman, EDX
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The single crystal HfS2 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785nm Raman system

Raman, XRD and EDX on HfS2:

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X-ray diffraction on a HfS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4

Powder X-ray diffraction (XRD) of a single crystal HfS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal HfS2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal HfS2. Measurement was performed with a 785 nm Raman system at room temperature.

HQ Graphene Wiki on:

HfS2 (Hafnium Disulfide)

1. Toru Kanazawa et al., "Few-layer HfS2 transistors", Sci. Rep. 2016, 6: 22277 (2016), link to article:

2. Kai Xu et al., "Ultrasensitive Phototransistors Based on Few-Layered HfS2", Adv. Mat. 27, 7881-7887 (2015), link to article:


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