MoSSe (Molybdenum Sulfide Selenide alloy)

MoSSe Molybdenum Sulfide Selenide alloy MoSSe alloy is a semiconductor. We have many different types of MoSSe alloys available containing a different ratio S/Se: from an alloy with a low amount of sulfur (close to 2H-MoSe2) up to high amount of sulfur (close to 2H-MoS2). The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. The Molybdenum Sulfide Selenide alloy belongs to the group-VI transition metal dichalcogenides (TMDC).

The MoSSe crystals produced at HQ Graphene have a typical lateral size of ~0.4-6 cm, hexagonal shaped and have a metallic appearance.


MoSSe crystal properties
Crystal size ~6 mm
Electrical properties Semiconductor
Crystal structure Hexagonal
Unit cell parameters Depending on the composition in the alloy: a = b = 0.31 -0.33 nm and c = 1.21 -1.29 nm, α = β = 90°, γ = 120°
Type Synthetic
Purity >99.995 %
Characterized by XRD, Raman, EDX
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The single crystal MoSSe is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system

Raman, XRD and EDX on MoSSe alloy:

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X-ray diffraction on a MoSSe single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10

Powder X-ray diffraction (XRD) of a single crystal MoSSe. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal MoSSe by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal MoSSe. Measurement was performed with a 785 nm Raman system at room temperature.





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MoSSe (Molybdenum Sulfide Selenide alloy)


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