P-As (Phosphor-Arsenic alloy)

Phosphor Arsenic alloy Phosphor Arsenic alloy is a semiconductor. We have different types of P-As alloys available containing a different ratio P/As. For low amounts of As the crystal can still be cleaved as a 2D crystal and the unit cell parameters are similar to black phosphorus (click here). The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers.

The P-As crystals produced at HQ Graphene have a typical lateral size of ~0.1 cm and have a metallic appearance.


Phosphor-Arsenic crystal properties
Crystal size ~ mm
Electrical properties Semiconductor
Crystal structure Orthorhombic
Unit cell parameters Depends on the composition in the alloy. For P/As ratio of ~1 : a = b = 0.338 nm, b = 10.743 nm, c = 0.446 nm, α = β = γ = 90°
Type Synthetic
Purity >99.995%
Characterized by XRD, Raman, EDX
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The single crystal P-As is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system

Raman, XRD and EDX on P-As:

Click on an image to zoom


Powder X-ray diffraction (XRD) of a single crystal P-As. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal P-As by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal P-As. Measurement was performed with a 785 nm Raman system at room temperature.





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P-As (Phosphor-Arsenic alloy)


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