SnS2 (2H Tin Disulfide)

2H SnS2 Tin Disulfide 2H-SnS2 is a semiconductor with an indirect band gap of ~2.2 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. SnS2 belongs to the group-14 post-transition metal dichalcogenides. To buy SnS2 crystals please click here.

The 2H phase Tin Disulfide crystals produced at HQ Graphene have a lateral size of ~0.6-0.8 cm, are transparent and are yellow colored." More information about the SnS2 crystals we sell can be found below.


2H-SnS2 crystal properties
Crystal size ~8 mm
Electrical properties Semiconductor (~2.2eV)
Crystal structure Hexagonal
Unit cell parameters a = b = 0.364, c = 0.589 nm, α = β = 90°, γ = 120°
Type Synthetic
Purity >99.995%
Characterized by XRD, Raman, EDX
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The single crystal SnS2 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system

Raman, XRD and EDX on 2H-SnS2:

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X-ray diffraction on a 2H phase Tin Disulfide single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4

Powder X-ray diffraction (XRD) of a single crystal 2H-SnS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal 2H-SnS2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal 2H-SnS2. Measurement was performed with a 785 nm Raman system at room temperature.





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SnS2 (Tin Disulfide)


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HQ Graphene is a company registered in The Netherlands, Europe under the number KVK 59652233.

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