SnS2 (2H Tin Disulfide)
2H-SnS2 is a semiconductor with an indirect band gap of ~2.2 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. SnS2 belongs to the group-14 post-transition metal dichalcogenides.
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The 2H phase Tin Disulfide crystals produced at HQ Graphene have a lateral size of ~0.6-0.8 cm, are transparent and are yellow colored." More information about the SnS2 crystals we sell can be found below.
|Crystal size||~8 mm|
|Electrical properties||Semiconductor (~2.2eV)|
|Unit cell parameters||a = b = 0.364, c = 0.589 nm, α = β = 90°, γ = 120°|
|Characterized by||XRD, Raman, EDX|
|More information?||Please contact us by email or phone|
The single crystal SnS2 is characterized using:XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Raman, XRD and EDX on 2H-SnS2:
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HQ Graphene Wiki on:
SnS2 (Tin Disulfide)
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