InSe (gamma phase)
InSe is a semiconductor 2D material having a bangap of ~1.22eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers.
To buy InSe crystals please click here.
The InSe crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, hexagonal shaped and have a metallic appearance.
More information about the InSe crystals we sell can be found below.
CuInP2S6 crystal properties
| Crystal size | ~6-8 mm |
| Electrical properties | Semiconductor |
| Crystal structure | Hexagonal |
| Unit cell parameters | a = b = 0.400 nm, c = 2.497 nm, α = β = 90°, γ = 120° |
| Monolayer properties |  Link to C2DB containing calculated properties |
| Type | Synthetic |
| Purity | >99.995 % |
| Characterized by | XRD, EDX |
| More information? | Please contact us by email or phone |
The single crystal InSe is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
XRD and EDX on InSe:
Click on an image to zoom
HQ Graphene Wiki on:
InSe (Indium Selenide)
1. Publications to be added soon!